Self-Heating Effects In Polysilicon Source Gated Transistors
نویسندگان
چکیده
منابع مشابه
Self-Heating Effects In Polysilicon Source Gated Transistors
Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may...
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The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the...
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...................................................................................................................ii Declaration .............................................................................................................iii Acknowledgments ................................................................................................... iv List of publications .................
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Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the pres...
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Compared with the field-effect transistor, the source-gated transistor has a much lower saturation voltage and higher output impedance. These features are investigated using computer modeling for amorphous silicon transistors operated at high currents when source barriers are low. In particular, it is shown that low saturation voltages are maintained at high current and are insensitive to sourc...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep14058